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dislocation extraction algorithm  (OVITO GmbH)

 
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    OVITO GmbH dislocation extraction algorithm
    Dislocation Extraction Algorithm, supplied by OVITO GmbH, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
    https://www.bioz.com/result/dislocation extraction algorithm/product/OVITO GmbH
    Average 90 stars, based on 1 article reviews
    dislocation extraction algorithm - by Bioz Stars, 2026-05
    90/100 stars

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    Dislocations and stacking faults. Panel (a) shows the fly view of the system, presenting a line-based representation of the <t>dislocation</t> network combined with a sphere-based representation of stacking faults (Au atoms with hcp local structure are shown). The table in panel (b) summarizes the results of the <t>DXA</t> analysis and explains the color coding used in panel (a). The number of identified dislocation segments and their total length are given for each dislocation type.
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    Dislocations and stacking faults. Panel (a) shows the fly view of the system, presenting a line-based representation of the <t>dislocation</t> network combined with a sphere-based representation of stacking faults (Au atoms with hcp local structure are shown). The table in panel (b) summarizes the results of the <t>DXA</t> analysis and explains the color coding used in panel (a). The number of identified dislocation segments and their total length are given for each dislocation type.
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    Dislocations and stacking faults. Panel (a) shows the fly view of the system, presenting a line-based representation of the dislocation network combined with a sphere-based representation of stacking faults (Au atoms with hcp local structure are shown). The table in panel (b) summarizes the results of the DXA analysis and explains the color coding used in panel (a). The number of identified dislocation segments and their total length are given for each dislocation type.

    Journal: Journal of Chemical Theory and Computation

    Article Title: Novel Method for Realistically Simulating the Deposition of Thin Films from the Gas Phase and its Application to Study the Growth of Thin Gold Film on Crystalline Silicon

    doi: 10.1021/acs.jctc.5c00319

    Figure Lengend Snippet: Dislocations and stacking faults. Panel (a) shows the fly view of the system, presenting a line-based representation of the dislocation network combined with a sphere-based representation of stacking faults (Au atoms with hcp local structure are shown). The table in panel (b) summarizes the results of the DXA analysis and explains the color coding used in panel (a). The number of identified dislocation segments and their total length are given for each dislocation type.

    Article Snippet: We also used other analysis methods, including the dislocation extraction algorithm (DXA) proposed by Stukowski, , implemented in OVITO, a program that we used for performing structural analyses (PTM, IDS and DXA) and for preparing visualizations.

    Techniques: